GB/T 41751-2022
Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers (English Version)
- Standard No.
- GB/T 41751-2022
- Language
- Chinese, Available in English version
- Release Date
- 2022
- Published By
- General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China
- Latest
- GB/T 41751-2022
- Scope
- This document specifies the method for testing the curvature radius of the crystal plane of a gallium nitride single crystal substrate using a high-resolution X-ray diffractometer. This document is applicable to the test of the curvature radius of the crystal surface of gallium nitride single crystal substrates prepared by chemical vapor deposition and other methods. The test of the crystal surface curvature radius of gallium nitride epitaxial wafers can be carried out with reference to this document.
GB/T 41751-2022 Referenced Document
- GB/T 14264 Semiconductor materials-Terms and definitions
GB/T 41751-2022 history
- 2022 GB/T 41751-2022 Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers
