DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide
The document specifies a test method for determination of the dislocation etch pits densities 100000 cm<(hoch)-2> in monocrystals of gallium phosphide. The method is independent on the electrical resistivity and the conductivity type of the material.
DIN 50454-3:1994 history
1994DIN 50454-3:1994 Testing of materials for semiconductor technology - Determination of the dislocation etch pits density in monocrystals of III-V-compound semiconductors - Part 3: Gallium phosphide