1.1 This specification covers aluminum–1 % silicon alloy wire for internal connections in semiconductor devices and is limited to wire of diameter up to and including 76 µm (0.003 in.). For diameters larger than 76 µm (0.003 in.), the specifications are to be agreed upon between the purchaser and the supplier.
1.2 The values stated in SI units are to be regarded as the standard, regardless of whether they appear first or second in a table. Values given in parentheses are for information only.
1.3 This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.
ASTM F487-13(2018) Referenced Document
ASTM F16 Standard Test Methods for Measuring Diameter or Thickness of Wire and Ribbon for Electronic Devices and Lamps
ASTM F219 Standard Test Methods of Testing Fine Round and Flat Wire for Electron Devices and Lamps
ASTM F487-13(2018) history
2018ASTM F487-13(2018) Standard Specification for Fine Aluminum–1 % Silicon Wire for Semiconductor Lead-Bonding
2013ASTM F487-13 Standard Specification for Fine Aluminumndash;1???% Silicon Wire for Semiconductor Lead-Bonding
1988ASTM F487-88(2006) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
1988ASTM F487-88(2001) Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding
2001ASTM F487-88(1995)e1 Standard Specification for Fine Aluminum-1% Silicon Wire for Semiconductor Lead-Bonding