GB/T 41853-2022
Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement (English Version)

Standard No.

GB/T 41853-2022

Language

Chinese, Available in English version

Release Date

2022

Published By

General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China

Latest

GB/T 41853-2022

Scope

This document specifies the method for measuring the bonding strength after wafer bonding, applicable to various wafer bonding methods such as silicon-silicon eutectic bonding, silicon-glass anodic bonding, and related structures in MEMS process and assembly process. Dimensional bond strength assessment. This document is suitable for bonding strength measurements between wafers from ten microns to several millimeters thick.

GB/T 41853-2022 history

• 2022 GB/T 41853-2022 Semiconductor devices—Micro-electromechanical devices—Wafer to wafer bonding strength measurement