ASTM F1239-02 PDF

Scope: Full Description This standard was transferred to SEMI (www.semi.org) May 20031.1 These test methods cover complementary procedures for testing the oxygen precipitation characteristics of silicon wafers. It is assumed that the precipitation characteristics are related to the amount of interstitial oxygen lost during specified thermal cycles. 1.2 These test methods may be used to compare qualitatively the precipitation characteristics of two or more groups of wafers. 1.3 These test methods may be applied to any - or -type, any orientation Czochralski silicon wafers whose thickness, resistivity, and surface finish are such as to permit the oxygen concentration to be determined by infrared absorption and whose oxygen concentration is such as to produce measurable oxygen loss. 1.4 These test methods are not suitable for determining the width or characteristics of a \"denuded zone,\" a region near the surface of a wafer that is essentially free of oxide precipitates. 1.5 Because these test methods are destructive, suitable sampling techniques must be employed. 1.6 The values stated in SI units are regarded as standard. 1.7 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use. Specific hazard statements are given in Section 8.

ASTM F1239-02 Referenced Document

ASTM C28 Standard Specification for Gypsum Plasters*， 1980-04-21 Update
ASTM D5127 Standard Guide for Ultra Pure Water Used in the Electronics and Semiconductor Industry*， 1999-04-21 Update
ASTM F1188
ASTM F1619 Standard Test Method for Measurement of Interstitial Oxygen Content of Silicon Wafers by Infrared Absorption Spectroscopy with p-Polarized Radiation Incident at the Brewster Angle *， 1995-04-21 Update
ASTM F951 Standard Test Method for Determination of Radial Interstitial Oxygen Variation in Silicon Wafers*， 2002-01-10 Update

1970 ASTM F1239-02
1994 ASTM F1239-94 Standard Test Methods for Oxygen Precipitation Characterization of Silicon Wafers by Measurement of Interstitial Oxygen Reduction