SJ 20635-1997
Test method for residual impurities concentration in microzone of semi-insulating gallium arsenide (English Version)

Standard No.

SJ 20635-1997

Language

Chinese, Available in English version

Release Date

1997

Published By

Professional Standard - Electron

Latest

SJ 20635-1997

Scope

This standard specifies the micro-area measurement method of carbon, EL2, chromium and silicon concentrations in semi-insulating gallium arsenide wafers with a thickness of 0.4 to 2.0 mm. This standard is applicable to the determination of the concentration of main remaining impurities carbon, EL2, chromium and silicon in semi-insulating gallium arsenide wafers.

SJ 20635-1997 history

• 1997 SJ 20635-1997 Test method for residual impurities concentration in microzone of semi-insulating gallium arsenide