SJ/T 11226-2000
Detail specification for electronic components.Type 3DA505 L band silicon pulse power transistor (English Version)
- Standard No.
- SJ/T 11226-2000
- Language
- Chinese, Available in English version
- Release Date
- 2000
- Published By
- Professional Standard - Electron
- Latest
- SJ/T 11226-2000
- Scope
- This specification applies to the 3DA505 L-band silicon pulse power transistor, which is in accordance with GB/T 7576-1998 "Semiconductor Devices Discrete Devices Part 7 Bipolar Transistors Part 4 High Frequency Amplifier Case Rated Bipolar Transistors Blank Detailed Specifications 》Standard is formulated and complies with the Class II requirements of GB/T 4589.1-1989 "General Specification for Semiconductor Devices Discrete Devices and Integrated Circuits" and GB/T 12560-1999 "Specification for Semiconductor Devices Discrete Devices".
SJ/T 11226-2000 history
- 2000 SJ/T 11226-2000 Detail specification for electronic components.Type 3DA505 L band silicon pulse power transistor
