SJ 3244.3-1989
Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide (English Version)

Standard No.

SJ 3244.3-1989

Language

Chinese, Available in English version

Release Date

1989

Published By

Professional Standard - Electron

Status

Withdraw 2010-02

Latest

SJ 3244.3-1989

Scope

This standard specifies the X-ray diffraction measurement principle, measurement procedures, result calculation and accuracy of gallium arsenide and indium phosphide single crystal ingot end surfaces and wafer crystal orientation. This standard is applicable to the determination of crystal orientation of single crystal wafers whose surface is generally parallel (within 10^(·)) to a certain low Miller index atomic plane.

SJ 3244.3-1989 history

• 1989 SJ 3244.3-1989 Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide