GB/T 43493.2-2023
Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects (English Version)

Standard No.
GB/T 43493.2-2023
Language
Chinese, Available in English version
Release Date
2023
Published By
General Administration of Quality Supervision, Inspection and Quarantine of the People‘s Republic of China  CN  /  GB
Latest
GB/T 43493.2-2023
 
Introduction
This standard specifies the criteria for non-destructive detection and identification of defects in silicon carbide homoepitaxial wafers used for power devices. It focuses on optical methods to detect various types of defects, ensuring high-quality semiconductor materials for advanced electronic applications.

GB/T 43493.2-2023 history

  • 2023 GB/T 43493.2-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects

Topics on standards and specifications

Casting defect detection Internal defect detection of castings Abnormal quality defects of semiconductors Internal crack defect detection method

Standard and Specification

BS IEC 63068-1:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Classification of defects BS IEC 63068-2:2019 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using IEC 63068-2:2019 Semiconductor devices – Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 2: Test method BS IEC 63068-3:2020 Semiconductor devices. Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Test method for defects using BS EN ISO 8289-2:2019 Vitreous and porcelain enamels. Low-voltage test for detecting and locating defects - Slurry test for profiled surfaces GSO IEC 60749-36:2014 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state IEC 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Part 36: Acceleration, steady state BS EN 60749-36:2003 Semiconductor devices - Mechanical and climatic test methods - Acceleration, steady state ASTM F523-02 Quality inspection practice of wafer surface without visual inspection ISO 21820:2021 Fine ceramics (advanced ceramics, advanced technical ceramics) - Ultraviolet photoluminescence image test method for analysing polytypes of boron- and nitrogen

GB/T 43493.2-2023 -All Parts

GB/T 43493.1-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 1: Defect classification GB/T 43493.2-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 2: Optical detection method of defects GB/T 43493.3-2023 Non-destructive testing and identification criteria for defects in silicon carbide homoepitaxial wafers for power devices of semiconductor devices Part 3: Photoluminescence detection method of defects


Copyright ©2026 All Rights Reserved
Update: Sun, 08 Feb 2026 02:38:22 +0000