GB/T 1558—2023 replaces the old standard GB/T1558—2009, and is mainly applicable to the test of substitutional carbon atom content in p-type silicon single crystals with resistivity greater than $3~\Omega\cdot\mathrm{cm}$ and n-type silicon single crystals with resistivity greater than $1~\Omega\cdot\mathrm{cm}$.
This standard has an important position in the field of semiconductor materials and is mainly used to evaluate the quality and performance of silicon materials. With the rapid development of the semiconductor industry, higher requirements are put forward for the control of impurity content in silicon materials, so it is particularly important to update and improve this standard.
| Technical Dimensions | Old Standard (GB/T1558—2009) | New Standard (GB/T1558—2023) |
|---|---|---|
| Test Range | Test Range at Room Temperature: $5\times10^{15}~\mathrm{cm}^{-3}$ to the maximum solid solubility of carbon atoms in silicon. | New Low-temperature Test Range: When the temperature is lower than $80~K$, the test range shall not be less than $5\times10^{14}~\mathrm{cm}^{-3}$. |
| Method principle | A single-beam infrared spectrometer was used for testing. | The applicability of dual-beam and Fourier transform infrared spectrometers was added, and the method of subtracting lattice absorption by the difference spectrum method was optimized. |
| Instrument requirements | The instrument resolution requirements were not specified. | The resolution of the room temperature infrared spectrometer was added to $2~\mathrm{cm}^{-1}$, and the resolution of the low temperature infrared spectrometer was added to $1~\mathrm{cm}^{-1}$. |
After introducing the new version of the standard, a semiconductor company achieved efficient carbon content testing through the following steps:

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Update:
Wed, 15 Apr 2026 04:09:37 +0000