(U.S.) Joint Electron Device Engineering Council Soild State Technology Association
Scope
The thin dielectric integrity of MOS devices and circuits is an important reliability concern.
Historically, thin oxide reliability has been driven by oxide defects. In general the intrinsic oxide
lifetime is much longer than the use requirements, but defects can significantly reduce oxide
lifetime. The procedures described herein were developed to estimate the integrity of a thin
oxide and as a tool for driving constant improvement in the thin oxide process.