BS IEC 60747-7:2000
Discrete semiconductor devices and integrated circuits-Bipolar transistors

Standard No.: BS IEC 60747-7:2000
Release Date: 2001
Published By: British Standards Institution (BSI)
Status: Be replaced 2011-02
Replace By: BS IEC 60747-7:2010; BS IEC 60747-7:2001
Latest: BS IEC 60747-7:2010+A1:2019

Scope: To be read in conjunction with IEC 60747-1 Cross References: IEC 60747-1:1983 IEC 60747-1:1983/A3:1996

BS IEC 60747-7:2000 history

2019 BS IEC 60747-7:2010+A1:2019 Semiconductor devices. Discrete devices - Bipolar transistors
2011 BS IEC 60747-7:2011 Semiconductor devices. Discrete devices. Bipolar transistors
2011 BS IEC 60747-7:2010 Semiconductor devices. Discrete devices. Bipolar transistors
2001 BS IEC 60747-7:2000 Discrete semiconductor devices and integrated circuits-Bipolar transistors

Topics on standards and specifications

Resistive effect of transistor collector IEC 60747-7:2000

Standard and Specification

BS IEC 60747-7:2001 semiconductor devices and integrated circuits - Bipolar transistors IEC 60747-7:2010+AMD1:2019 CSV Semiconductor devices - Discrete devices - Part 7: Bipolar transistors BS IEC 60747-9:2019 Semiconductor devices - Discrete devices. Insulated-gate bipolar transistors (IGBTs GSO IEC 60748-4-1:2013 Semiconductor devices - Integrated circuits - Part 4: Interface integrated circuits - Section 1: Blank detail specification for linear digital-to-analogue KS C IEC 60747-7:2006 Semiconductor devices－Discrete devices－Part 7：Bipolar transistors GB 14028-2018 Basic principles of semiconductor integrated circuit analog switch test methods IEC 60747-9/AMD1:2001 Semiconductor devices - Part 9: Insulated-gate bipolar transistors (IGBTs); Amendment 1 GOST R 71693-2024 Semiconductor devices. Methods for establishing standards and tolerances for electrical parameters FAB GAAS DEVC-2005 Fabrication of GaAs Devices

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